Toshiba SSM3J66MFV,L3XHF MOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723
Manufacturer: Toshiba Model: SSM3J66MFV,L3XHF - Contact
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Technology: Si
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.6 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 8 V, + 6 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 26 ns
Id - Continuous Drain Current: 800 mA
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 480 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
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