IXYS IXA30PG1200DHGLB IGBT Transistors XPT IGBT Phaseleg
制造商: IXYS Model: IXA30PG1200DHGLB - 联系
Technology: Si
Unit Weight: 8 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 150 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 30 A
Collector-Emitter Saturation Voltage: 1.9 V
Continuous Collector Current at 25 C: 43 A
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